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| LESHAN RADIO COMPANY, LTD. Switching Diode This switching diode has the following features: * Low Leakage Current Applications * Medium Speed Switching Times * Available in 8 mm Tape and Reel Use BAS116LT1 to order the 7 inch/3,000 unit reel Use BAS116LT3 to order the 13 inch/10,000 unit reel 3 CATHODE 1 ANODE 1 2 BAS116LT1 3 MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol VR IF I FM(surge) CASE 318-08, STYLE 8 SOT-23 (TO-236AB) Value 75 200 500 Unit Vdc mAdc mAdc DEVICE MARKING BAS116LT1 = JV THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C RJA PD RJA TJ , Tstg ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Symbol IR Min -- -- 75 -- -- -- -- -- -- Max 5.0 80 -- 900 1000 1100 1250 2.0 3.0 Unit nAdc OFF CHARACTERISTICS Reverse Voltage Leakage Current (V R = 75 Vdc ) (V R = 75 Vdc , T J =150C) Reverse Breakdown Voltage (I BR = 100 Adc) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Diode Capacitance(V R = 0, f = 1.0 MHz) Reverse Recovery Time (I F = I R = 10mAdc, )( Figure 1) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. V (BR) VF Vdc mV CD t rr pF s G4-1/2 LESHAN RADIO COMPANY, LTD. BAS116LT1 820 2.0 k 0.1F tr t t IF t rr t +10 V p 100 H IF 10% 0.1 F 50 OUTPUT PULSE GENERATOR D.U.T. 50 INPUT SAMPLING OSCILLOSCOPE 90% i R(REC) = 1.0 mA INPUT SIGNAL VR IR OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p t rr Figure 1. Recovery Time Equivalent Test Circuit G4-2/2 |
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